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A study of dielectric breakdown mechanism through the statistical analysis of post-breakdown resistance of thin SiO 2 films

✍ Scribed by Toriumi, A; Satake, H


Book ID
122177219
Publisher
Institute of Physics and National Institute of Materials Science
Year
2000
Tongue
English
Weight
247 KB
Volume
1
Category
Article
ISSN
1468-6996

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