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A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

✍ Scribed by Zhi-Yuan Cheng; Ling, C.H.

Book ID: 114537997
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 161 KB
Volume: 47
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.817573

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