Spin injection in ferromagnetic single-e
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A.N. Korotkov; V.I. Safarov
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Article
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1999
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Elsevier Science
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English
β 67 KB
We consider the single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island. Tunneling current causes nonequilibrium electron-spin distribution in the island. The dependencies of the magnetoresistance ratio on the bias and gate voltages show the dips which are directly rela