Spin injection in ferromagnetic single-electron transistor

✍ Scribed by A.N. Korotkov; V.I. Safarov

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 67 KB
• Volume: 25
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1998.0644

✦ Synopsis

We consider the single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island. Tunneling current causes nonequilibrium electron-spin distribution in the island. The dependencies of the magnetoresistance ratio on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins.