𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A Simplified Error Model for Accurate Measurement of High-Frequency Transistor S Parameters

✍ Scribed by He, Mingchen


Book ID
115491584
Publisher
IEEE
Year
1985
Tongue
English
Weight
769 KB
Volume
IM-34
Category
Article
ISSN
0018-9456

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A methodology for accurate modeling of a
✍ J. Jayabalan; B. L. Ooi; B. Wu; D. S. Xu; M. K. Iyer; M. S. Leong πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 113 KB

## Abstract In this paper, we describe a novel method for modeling pad geometries via parameter extraction using __S__‐parameter measurements. We apply the method to a square pad structure, built with a coplanar transmission line on high‐resistivity silicon, and arrive at an equivalent‐circuit mode

Analytical noise model of a high-electro
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 154 KB

## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient