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A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

โœ Scribed by Hareland, S.A.; Jallepalli, S.; Chindalore, G.; Shih, W.-K.; Tasch, A.F., Jr.; Maziur, C.M.


Book ID
114536887
Publisher
IEEE
Year
1997
Tongue
English
Weight
60 KB
Volume
44
Category
Article
ISSN
0018-9383

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