A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

✍ Scribed by De Michielis, M.; Esseni, D.; Tsang, Y.L.; Palestri, P.; Selmi, L.; O'Neill, A.G.; Chattopadhyay, S.

• Book ID: 114618880
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 356 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.902873