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A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors

โœ Scribed by Padilla, J. L.; Gamiz, F.; Godoy, A.


Book ID
115515052
Publisher
IEEE
Year
2012
Tongue
English
Weight
330 KB
Volume
33
Category
Article
ISSN
0741-3106

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Kinetic modelling of electron tunneling
โœ F. Rana; S. Tiwari; J.J. Welser ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 240 KB

Transport of electrons in semiconductor nano-structures exhibits many features that are a consequence of quantum confinement and Coulomb blockade. A quantum dot coupled to a metal-oxide-semiconductor transistor's channel region is one example of such a structure with utility as a dense semiconductor