A simple analytical model for gate capacitance-voltage characteristics of HEMTs
β Scribed by Amitava DasGupta; Nandita DasGupta
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 310 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The article presents a simple noise equation for the first time, including a contribution from the gate leakage, which accurately predicts the experimentally observed relatively flat minimum noise figure NF~min~ for a GaN HEMT with frequency, published by Lu et al. [1] Β© 2002 Wiley Peri
## Abstract A twoβdimensional analytical model for an AlGaN/GaN MODFET is presented. The model assumes the velocity saturation of electrons in 2βDEG, which causes current saturation and accurately predicts the output conductance arising from the channel length modulation. The effects of spontaneous