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A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD

✍ Scribed by Steven H. Voldman

Book ID: 108210510
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 519 KB
Volume: 45
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2004.10.017

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