✦ LIBER ✦
[IEEE 2004 IEEE International Reliability Physics Symposium. - Phoenix, AZ, USA (25-29 April 2004)] 2004 IEEE International Reliability Physics Symposium. Proceedings - The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology
✍ Scribed by Voldman, S.; Lanzerotti, L.; Morris, W.; Rubin, L.
- Book ID
- 120609474
- Publisher
- IEEE
- Year
- 2004
- Weight
- 643 KB
- Category
- Article
- ISBN-13
- 9780780383159
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