A reliable procedure for the analysis of multiexponential transients that arise in deep level transient spectroscopy
β Scribed by M. Hanine; M. Masmoudi; J. Marcon
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 184 KB
- Volume
- 114-115
- Category
- Article
- ISSN
- 0921-5107
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β¦ Synopsis
In this paper, a reliable procedure, which allows a fine as well as a robust analysis of the deep defects in semiconductors, is detailed. In this procedure where capacitance transients are considered as multiexponential and corrupted with Gaussian noise, our new method of analysis, the Levenberg-Marquardt deep level transient spectroscopy (LM-DLTS) is associated with two other high-resolution techniques, i.e. the Matrix Pencil which provides an approximation of exponential components contained in the capacitance transients and Prony's method recently revised by Osborne in order to set the initial parameters.
π SIMILAR VOLUMES
We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum-and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application