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A reliable procedure for the analysis of multiexponential transients that arise in deep level transient spectroscopy

✍ Scribed by M. Hanine; M. Masmoudi; J. Marcon


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
184 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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✦ Synopsis


In this paper, a reliable procedure, which allows a fine as well as a robust analysis of the deep defects in semiconductors, is detailed. In this procedure where capacitance transients are considered as multiexponential and corrupted with Gaussian noise, our new method of analysis, the Levenberg-Marquardt deep level transient spectroscopy (LM-DLTS) is associated with two other high-resolution techniques, i.e. the Matrix Pencil which provides an approximation of exponential components contained in the capacitance transients and Prony's method recently revised by Osborne in order to set the initial parameters.


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Study of the deep level related to a pla
✍ Y. Kamiura; Y. Iwagami; K. Fukuda; Y. Yamashita; T. Ishiyama; Y. Tokuda πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 167 KB

We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum-and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application