✦ LIBER ✦

A relationship for temperature dependence of threshold current for 1.3-μm compressively strained-layer multiple-quantum-well lasers

✍ Scribed by Huang, R.; Simmons, J.G.; Jessop, P.E.; Evans, J.

Book ID: 119786175
Publisher: IEEE
Year: 1997
Tongue: English
Weight: 98 KB
Volume: 9
Category: Article
ISSN: 1041-1135
DOI: 10.1109/68.593336

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Well-thickness dependence of high-temper

Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers

✍ Ishikawa, T.; Higashi, T.; Uchida, T.; Yamamoto, T.; Fujii, T.; Shoji, H.; Kobay 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 54 KB

Compressively strained 1.3 μm InAsP/InP

Compressively strained 1.3 μm InAsP/InP and GaInAsP/InP multiple quantum well lasers for high-speed parallel data transmission systems

✍ Fukushima, T.; Kasukawa, A.; Iwase, M.; Namegaya, T.; Shibata, M. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 749 KB

MOVPE growth of strained InAsP/InGaAsP q

MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers

✍ Yamamoto, M.; Yamamoto, N.; Nakano, J. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 804 KB

Design criteria of 1.3-μm multiple-quant

Design criteria of 1.3-μm multiple-quantum-well lasers for high-temperature operation

✍ Yamamoto, N.; Seki, S.; Noguchi, Y.; Kondo, S. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 73 KB

Temperature dependence of the threshold

Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm)

✍ Imenkov, A. N.; Sherstnev, V. V.; Kovalev, I. V.; Ilâinskaya, N. D.; Serebrenn 📂 Article 📅 2013 🏛 Springer 🌐 English ⚖ 195 KB

The Hydrostatic Pressure Dependence of t

The Hydrostatic Pressure Dependence of the Threshold Current in 1.3 μm InGaAsP Quantum Well Semiconductor Diode Lasers

✍ A. F. Phillips; S. J. Sweeney; A. R. Adams; P. J. A. Thijs 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 191 KB 👁 1 views

We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.