## Abstract The novel use of resonant Raman spectroscopy to elucidate the band gap of InN is illustrated in a study of MBEβgrown films. This technique can distinguish between electronic transitions related to the InN from transitions related to defects and impurities that are so typical for current
A Raman spectroscopy study of InN
β Scribed by M Kuball; J.W Pomeroy; M Wintrebert-Fouquet; K.S.A Butcher; Hai Lu; W.J Schaff
- Book ID
- 108165844
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 296 KB
- Volume
- 269
- Category
- Article
- ISSN
- 0022-0248
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