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A quasi-zero-gap semiconductor at high pressures as a model of amorphous semiconductor

✍ Scribed by M. I. Daunov; I. K. Kamilov; S. F. Gabibov; A. B. Magomedov

Publisher: Springer
Year: 2008
Tongue: English
Weight: 407 KB
Volume: 51
Category: Article
ISSN: 1573-9228
DOI: 10.1007/s11182-008-9094-2

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