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A doped highly compensated crystal semiconductor as a model of amorphous semiconductors

✍ Scribed by Ryvkin, S. M. ;Shlimak, I. S.


Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
717 KB
Volume
16
Category
Article
ISSN
0031-8965

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Structural Disorder Model of Amorphous S
✍ B. A. Vaid; K. C. Sharma πŸ“‚ Article πŸ“… 1985 πŸ› John Wiley and Sons 🌐 English βš– 324 KB

## Abstract The structural disorder model of amorphous semiconductors, near the amorphous to crystalline transition, recently proposed, is generalized for triply coordinated As. The model is able to explain at least qualitatively the change in enthalpy and the configurational entropy during transit