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A positron investigation of electron-irradiation induced defects in γ-TiAl intermetallic compounds

✍ Scribed by G. Sattonnay; C. Dimitrov; C. Corbel; O. Dimitrov

Book ID
117681784
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
185 KB
Volume
7
Category
Article
ISSN
0966-9795

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Based on positron annihilation experiments, we have proposed that in 3C-SiC isolated silicon vacancies are responsible for positron trapping after electron irradiation. We have also proposed that in hexagonal SiC one type of vacancy defects survives after annealing at 1000 1C which is attributable t