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A polysilicon-on-oxide (POSOX) isolation structure for bipolar integrated circuits

✍ Scribed by Chung-Len Lee; Tan Fu Lei; Neng-Wei Wu; Rey-Bin Tang


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
598 KB
Volume
30
Category
Article
ISSN
0038-1101

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A simulation model of the composite β€œpin
✍ K.W. Current; D.M. Okahata πŸ“‚ Article πŸ“… 1988 πŸ› Elsevier Science 🌐 English βš– 655 KB

A circuit simulation model of the composite "pinch resistor" device structure on linear bipolar semicustom integrated circuits is presented. This model represents the operation of a pair of pinch resistors, and of their parasitic devices in their isolated epi region. Parasitics included in the model