A simulation model of the composite “pinch resistor” device structure on linear bipolar semicustom integrated circuits
✍ Scribed by K.W. Current; D.M. Okahata
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 655 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0026-2692
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✦ Synopsis
A circuit simulation model of the composite "pinch resistor" device structure on linear bipolar semicustom integrated circuits is presented. This model represents the operation of a pair of pinch resistors, and of their parasitic devices in their isolated epi region. Parasitics included in the model are the JFETs, and the vertical and lateral pnp transistors associated with the pinch resistors. Good agreement between simulated and experimental results has been found in DC, AC, and transient circuit examples. With this new model, the behaviour of this useful composite set of devices may be more completely depicted in circuit simulations.