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A physics-based, analytical heterojunction bipolar transistor model, including thermal and high-current effects

✍ Scribed by Liou, J.J.; Liou, L.L.; Huang, C.I.; Bayraktaroglu, B.

Book ID: 114535213
Publisher: IEEE
Year: 1993
Tongue: English
Weight: 641 KB
Volume: 40
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.231560

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