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A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

✍ Scribed by Bazigos, A.; Krummenacher, F.; Sallese, J.-M.; Bucher, M.; Seebacher, E.; Posch, W.; Molnár, K.; Mingchun Tang

No coin nor oath required. For personal study only.

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