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A photoluminescence and X-ray diffraction analysis of InAlAs/InP heterostructures grown by molecular beam epitaxy

✍ Scribed by S.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan


Book ID
107864718
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
561 KB
Volume
266
Category
Article
ISSN
0040-6090

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Photoluminescence and X-ray diffraction
✍ S.F. Yoon; P.H. Zhang; H.Q. Zheng πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 516 KB

We have investigated the effect of substrate temperature (Ts varied from 410 to 560Β°C) on the crystalline and optical properties of In l\_x\_rGaxAlyAs layers grown on InP substrates by molecular beam epitaxy (MBE). The quaternary samples were analysed using double axis X-ray diffraction (XRD), low t