✦ LIBER ✦

A p-v-n diode model for CMOS latchup

✍ Scribed by Hans P. Zappe; Chenming Hu

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 506 KB
Volume: 34
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(91)90068-a

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Transient analysis for a new CMOS latchu

Transient analysis for a new CMOS latchup model

✍ Wei Li; M. El Nokali 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 636 KB

A memristive circuit model for p-n junct

A memristive circuit model for p-n junction diodes

✍ Leon O. Chua; Chong-Wei Tseng 📂 Article 📅 1974 🏛 John Wiley and Sons 🌐 English ⚖ 997 KB

## Abstract A new simple lumped circuit model for junction diodes is presented. The model contains only 4 elements; namely, 2 __controlled current sources__, a __nonlinear capacitor__, and a __memristor__. Each component bears a simple relationship with the physical operating mechanisms inside the

A linearized model for the temperature s

A linearized model for the temperature sensitivity of P-N junction diodes

✍ M.Fayyaz Khan; M.Rezwan Khan 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 322 KB

The surface recombination model of p-n d

The surface recombination model of p-n diode flicker noise

✍ A. Van der Ziel 📂 Article 📅 1970 🏛 Elsevier Science ⚖ 253 KB

Compact quantum model for a silicon MOS

Compact quantum model for a silicon MOS tunnel diode

✍ M.I. Vexler; N. Asli; A.F. Shulekin; B. Meinerzhagen; P. Seegebrecht 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 180 KB

Diode n-p CuInSe2 Structures Fabricated

Diode n-p CuInSe2 Structures Fabricated by Oxygen Implantation

✍ Dr. G. A. Medvedkin; V. Yu. Rud; Dr. M. V. Yakushev 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 192 KB