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A novel Urushi matrix chloride ion-selective field effect transistor

✍ Scribed by Shin-ichi Wakida; Masataka Yamane; Kazuo Hiiro


Book ID
118995127
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
256 KB
Volume
35
Category
Article
ISSN
0039-9140

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The pH response of a pH-sensitive fieldeffect transistor (FET) is not affected by a ca. l-pm thick membrane formed from r-aminopropyltriethoxysilane and glutaraldehyde over the gate insulator by a vapor deposition method. The response between pH 5.5 and 8.5 is ca. 61 mV pH-' at 37Β°C in 5 mM Tris-HCl