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A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing

✍ Scribed by Jongdae Kim; Tae Moon Roh; Sang-Gi Kim; Il-Yong Park; Bun Lee

Book ID: 114616953
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 639 KB
Volume: 50
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2002.807442

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