H, in air can be detected with sensors based on semiconductor oxides. A new technique for growing a hydrogen sensor based on SnO,(Bi,O,) thin films is presented here. The thin films have a thickness of 200-250 nm and the metals are in the atomic ratio Bi/Sn.= (3-S) at.%](97-95) at.%. The two metals
A novel PVD technique for the preparation of SnO2 thin films as C2H5OH sensors
β Scribed by G. Sberveglieri; G. Faglia; S. Groppelli; P. Nelli; A. Taroni
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 892 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0925-4005
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