A polyimide passi¨ated semitransparent metal᎐semicon-( ) ductor᎐metal photodetector MSM᎐PD with an In Ga PrGaAs 0 .49 0 .51 layer structure has been fabricated and characterized. For a 50 m = 50m de¨ice with 2 m finger width and 2 m finger spacing, we obtained a dark current density of 7.44 Arcm 2 f
✦ LIBER ✦
A novel high-speed silicon MSM photodetector operating at 830 nm wavelength
✍ Scribed by Lee, H.C.; Van Zeghbroeck, B.
- Book ID
- 120631169
- Publisher
- IEEE
- Year
- 1995
- Tongue
- English
- Weight
- 287 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0741-3106
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