Scanning tunneling spectroscopy performed at T = 6 K is used to investigate the local density of states (LDOS) of electron systems in the bulk conduction band of InAs. In particular, the 3DES of the n-doped material and an adsorbate-induced 2DES located at the surface are investigated at B = 0 and 6
β¦ LIBER β¦
A novel device layout for tunneling spectroscopy of low-dimensional electron systems
β Scribed by G Ploner; H Hirner; T Maier; G Strasser; J Smoliner; E Gornik
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 186 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1386-9477
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