A non-linear and distributed modelling procedure of fets

✍ Scribed by Éaric Ongareau; Renato G. Bosisio; Michel Aubourg; Juan J. Obregon; Michel Gayral

• Publisher: John Wiley and Sons
• Year: 1993
• Tongue: English
• Weight: 748 KB
• Volume: 6
• Category: Article
• ISSN: 0894-3370
• DOI: 10.1002/jnm.1660060402

✦ Synopsis

This paper describes a rigorous and systematic procedure to derive a non-linear distributed FET model that can easily be implemented in CAD routines of simulators based on harmonic balance techniques. The new model is derived from a knowledge of the conventional linear lumped equivalent circuit, from non-linear current sources extracted from pulsed measurements, and from the physical dimensions of the FET.

For fundamental and harmonic frequencies, the FET is modelled by N identical cells. Each cell is made up of a non-linear two-port section inserted between two linear four-port sections that simulate the coupling and the distributed effects along the electrodes of the FET in the width direction only. This non-linear distributed scaling approach to FET modelling has been applied to the analysis of a submicrometre-gate GaAs FET at millimetre-wave frequencies, and the results were compared with the non-linear lumped element approach. This approach can be applied to other transistors used in non-linear regions at microwave and millimetre-wave frequencies.