Epitaxy β a new technology for fabricati
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J. Kemmer; F. Wiest; A. Pahlke; O. Boslau; P. Goldstrass; T. Eggert; M. Schindle
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Article
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2005
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Elsevier Science
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English
β 389 KB
Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SD