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A new substrate current model for submicron MOSFETs

โœ Scribed by Kolhatkar, J.S.; Dutta, A.K.

Book ID
114538102
Publisher
IEEE
Year
2000
Tongue
English
Weight
112 KB
Volume
47
Category
Article
ISSN
0018-9383

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A new unified model for submicron MOSFET
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A new unified analytical model for submicron MOSFETs, valid for all regions of operation (including deep subthreshold), is presented in this paper. It accounts for the changes in the subthreshold slope with respect to the applied drain voltage. A new unification technique is proposed, which preserve