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A new compact physical submicron MOSFET model for circuit simulation

โœ Scribed by Ali A. Ati; M. Napieralska; A. Napieralski; Z. Ciota


Book ID
114156029
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
1023 KB
Volume
51-52
Category
Article
ISSN
0167-9317

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A new unified analytical model for submicron MOSFETs, valid for all regions of operation (including deep subthreshold), is presented in this paper. It accounts for the changes in the subthreshold slope with respect to the applied drain voltage. A new unification technique is proposed, which preserve