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A new simplified charge pumping current model and its model parameter extraction [MOSFET]

✍ Scribed by Hsin-Hsien Li; Yu-Lin Chu; Ching-Yuan Wu


Book ID
114536607
Publisher
IEEE
Year
1996
Tongue
English
Weight
616 KB
Volume
43
Category
Article
ISSN
0018-9383

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## Abstract A direct extraction method is newly developed to determine RF MOSFET model parameters using two‐port parameter equation derived from two zero‐bias equivalent circuits under common source‐gate and source‐drain configurations. This method is much simpler and more accurate than conventiona