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A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy

✍ Scribed by K. S. Zhuravlev; T. S. Shamirzaev; N. A. Yakusheva; I. P. Petrenko


Book ID
110119943
Publisher
Springer
Year
1998
Tongue
English
Weight
98 KB
Volume
32
Category
Article
ISSN
1063-7826

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