A new profiling technique for characterizing hot carrier induced oxide damages in LDD n-MOSFET's

✍ Scribed by G.-H Lee; J.-S Su; Steve S. Chung

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 310 KB
• Volume: 28
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/0167-9317(95)00078-m