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A new process for simultaneous fabrication of a buried and a surface oxide layer

✍ Scribed by G. Hinrichs; D. Preikszat

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
377 KB
Volume
39
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

A thermodynamic model for the growth of
A thermodynamic model for the growth of buried oxide layers by thermal oxidation
✍ E. Schroer; S. Hopfe; J.-Y. Huh; U. GΓΆsele πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 302 KB

A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxy