A new analytical method to extract the s
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J. L. Olvera Cervantes; J. L. Medina Monroy; R. A. Chávez Pérez; A. Velázquez Ve
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Article
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2008
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John Wiley and Sons
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English
⚖ 329 KB
👁 1 views
## Abstract A new set of simply analytical equations is proposed as an alternative method to calculate the intrinsic transistor elements of an extended model for microwave FET's. This method is based on Y‐parameters as well as on a new process to determine the differential resistances R~fs~ and R~f