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A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits

✍ Scribed by Yeong-Lin Lai; Kuo-Hua Hsu


Book ID
114554137
Publisher
IEEE
Year
2001
Tongue
English
Weight
209 KB
Volume
49
Category
Article
ISSN
0018-9480

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## Abstract A new set of simply analytical equations is proposed as an alternative method to calculate the intrinsic transistor elements of an extended model for microwave FET's. This method is based on Y‐parameters as well as on a new process to determine the differential resistances R~fs~ and R~f