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A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

✍ Scribed by Djezzar, B.; Oussalah, S.; Smatti, A.

Book ID: 126054128
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 367 KB
Volume: 51
Category: Article
ISSN: 0018-9499
DOI: 10.1109/TNS.2004.832549

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