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A new model for the discharge behaviour of metal-nitride-oxide-silicon (MNOS) non-volatile memory devices

✍ Scribed by Guido L. Heyns; Herman E. Maes

Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 409 KB
Volume: 30
Category: Article
ISSN: 0169-4332
DOI: 10.1016/0169-4332(87)90088-2

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