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A new method for estimating the diffusivities of vacancies in passive films

โœ Scribed by Elzbieta Sikora; Janusz Sikora; Digby D. Macdonald

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
754 KB
Volume
41
Category
Article
ISSN
0013-4686

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โœฆ Synopsis

Mott-Schottky (M-S) analysis in conjunction with the Point Defect Model (PDM) for passive films, we have determined the oxygen vacancy diffusion coefficient in the WO,_, passive film formed on tungsten in phosphoric acid (pH = 0.96) solution at ambient temperature. The value obtained for Do is in the range (3.7-5.3) x lo-" cm's. This value was extracted from the exponential relationship between the donor density and the film formation voltage assuming that the depletion region in the film close to the metal/film interface dominates the semiconductor properties.

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