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A new mesa-etching technique for gallium arsenide

✍ Scribed by B. M. Arora; V. T. Karulkar; S. Guha


Publisher
Springer
Year
1973
Tongue
English
Weight
122 KB
Volume
8
Category
Article
ISSN
0022-2461

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A fracture criterion for gallium arsenid
✍ H.E. Belsinger Jr; B. Wilner; U. Tasch; L.D.T. Topoleski πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 528 KB

The fracture of single crystal gallium arsenide (GaAs) semi-conducting wafers was studied. Prismatic beam specimens, cut at different crystallographic orientations from thin wafers, were loaded to failure in four-point bending. Fracture in these crystals occurred predominantly on the { 1 IO} family