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A new lattice relaxation mode in InGaAs on GaAs

✍ Scribed by Takuya Fujii; Susumu Yamazaki

Book ID
103170376
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
388 KB
Volume
146
Category
Article
ISSN
0022-0248

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## Abstract The series of samples is investigated to verify the validity of the scattering theory within the layers of different relaxation degree. The samples composed of In~0.06~Ga~0.94~As layer of different thicknesses on GaAs [001] substrates were grown using MBE technique. The symmetric and as

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