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A new growth mechanism in layer structures

✍ Scribed by E. Mooser; M. Schlüter; R.M.A. Lieth

Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
925 KB
Volume
16
Category
Article
ISSN
0022-0248

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## Abstract Structural defects of α‐SiC epitaxial layers grown by sublimation “sandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 °C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype s