A new fabrication method of ultra small tunnel junctions
โ Scribed by Youiti Ootuka; Keiji Ono; Hiroshi Shimada; Shun-ichi Kobayashi
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 221 KB
- Volume
- 227
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A novel nanometer patterning technique was developed to pattern epitaxial CoSi layers and to fabricate Schottky-2 tunneling MOSFETs. The nanopatterning method is based on the local oxidation of silicide layers. A feature size as small as 50 nm was obtained for 20 nm epitaxial CoSi layers on Si(100)
A non-perturbative calculation is performed for Coulomb blockade in a small tunnel junction, by use of the closed-time-path Green's function and Odintsov's polaron formulation. Self consistent forms for the currentvoltage (I-V) characteristics, the damping function, the fluctuation function, and the