A new damascene architecture for high-performance metal–insulator–metal capacitors integration

✍ Scribed by A. Farcy; J. Torres; V. Arnal; M. Fayolle; H. Feldis; F. Jourdan; M. Assous; J.L. Di Maria; V. Vidal

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 510 KB
• Volume: 70
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(03)00468-4

✦ Synopsis

As high-performance metal-insulator-metal capacitors are required for new technologies, an innovative architecture was developed with standard damascene processes used for copper interconnect realization. Low-cost damascene capacitors were 2 integrated with thin Si N films, leading to 2.9 fF / mm capacitance values and low leakage currents, demonstrating this 3 4 architecture ability to reduce the insulators thickness, thus achieving high-performance passive implementation for mixed integrated circuits.