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A new calculation approach of transistor noise parameters as a function of gatewidth and bias current

โœ Scribed by Gasmi, A.; Huyart, B.; Bergeault, E.; Jallet, L.P.


Book ID
114552869
Publisher
IEEE
Year
1997
Tongue
English
Weight
308 KB
Volume
45
Category
Article
ISSN
0018-9480

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