Simulation of Coupled Diffusion of Impur
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O.I Velichko; V.A Dobrushkin; A.N Muchynski; V.A Tsurko; V.A Zhuk
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Article
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2002
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Elsevier Science
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English
โ 166 KB
A two-dimensional model of doping of the active regions in semiconductor devices by means of ion implantation and thermal annealing is stated and analyzed. Radiation enhanced diffusion of impurity atoms during high temperature implantation of hydrogen ions is also considered. An economic finite diff