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A new approach to model d.c. and a.c. characteristics of junction gate field effect transistors

✍ Scribed by D. Sodini; D. Rigaud

Publisher: Elsevier Science
Year: 1981
Tongue: English
Weight: 483 KB
Volume: 24
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(81)90192-1

No coin nor oath required. For personal study only.

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