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A new approach for physical-based modelling of bipolar power semiconductor devices

✍ Scribed by R. Chibante; A. Araújo; A. Carvalho

Book ID
108271696
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
698 KB
Volume
52
Category
Article
ISSN
0038-1101

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Physically based 2D compact model for po
Physically based 2D compact model for power bipolar devices
✍ P. M. Igic; M. S. Towers; P. A. Mawby 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 157 KB

## Abstract The two‐dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simul