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A moving boundary diffusion model for PIN diodes

โœ Scribed by Zhang, H.; Pappas, J.A.


Book ID
127053643
Publisher
IEEE
Year
2001
Tongue
English
Weight
94 KB
Volume
37
Category
Article
ISSN
0018-9464

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Numerical modeling of a moving boundary
โœ H. Rohdin ๐Ÿ“‚ Article ๐Ÿ“… 1983 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 845 KB

We have modeled numerically the redistribution by diffusion and drift of impurities during epitaxial growth of semiconductors. We use a Crank-Nicholson scheme with dynamically adjusted time increment. The coupling between the redistribution of the charged impurities and the electric field is account